Irhnmc9a7120
WebRad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2 package - SMD-0.2, 100 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened WebBrowse millions of electronic components or search by part number at Datasheets360.com.
Irhnmc9a7120
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WebDownload datasheets and manufacturer documentation forInfineonIRHNMC9A7120. Compliance Statements Conflict Mineral Statement Alternate Names Infineonhas several brands around the world that distributors may use as alternate names. Infineonmay also be known as the following names: Infineon Technologies INF INFINE INFIN INFINEO INFI … WebHermetic MOSFET - Serie HiRel: configurazioni singola, doppia, quad e voltage da 20V fino a 600V.
Webtemplate irhnmc9a7120 d g s #***** # Model Generated by MODPEX * #Copyright(c) Symmetry Design Systems* # All Rights Reserved * # UNPUBLISHED LICENSED SOFTWARE ... WebFrom 20 V to 650 V, Infineon’s N-channel rad hard power MOSFETs are space-qualified to DLA and ESA standards
WebThe IRHNMC9A7120 from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source … WebDownload Infineon Technologies Corporation IRHNMC9A7120 pdf datasheet file. Electronics components database. Search Circuit. Section Search. Log In. Infineon Technologies Corporation IRHNMC9A7120 Datasheet. If it is not shown correctly, Click here to open the file on a separate window 0-C D-L M-R S ...
WebThis is the latest product release of R9 RadHard MOSFET. This device is rated at 23A with an RDSon of only 55mOhms. The product is also available in 100k and 300kRad versions. For ceramic lid version, the part number is IRHNMC9A7120. Features: Low RDS (on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge how far earth to jupiterWebIRHNMC9A7120 Pre-Irradiation Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads (Si) 1 Symbol Units Test Conditions Min. … hierarchy mafiaWebThe IRHNMC9A7120 from Infineon Technologies is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage 100 V, Gate … hierarchy mappingWebIRHNJ5S97130SCS IRHNMC597110 IRHNMC9A7120 IRHNS57260SE IRHNS67164SCS IRHNS9A7064SCS INFINION BCR196E6327 IPP90N06S404XK IPP60R520E6XK IPP086N10N3 G(SP000680840) IRHNA5S97260 Worldway Electronics, World's largest source of shortage and hard to find parts Franchised Distributor Resource. ... hierarchy masculinityWebIRHNMC9A7120: Category: Single Rad-Hard MOSFETs: Title: 100V 100kRad Single N-Channel TID Hardened MOSFET in a SMD-0.2C package: Description: Company: Infineon … hierarchy management in mdmWebIRHNM9A7120 - MOSFET from Infineon Technologies. Get product specifications, Download the Datasheet, Request a Quote and get pricing for IRHNM9A7120 on SatNow how far earth is from the sunWebRejoignez ArrowPerks pour obtenir 50 $ de remise à partir de 300 $ de commande avec le code PERKS50 how far east did alexander\\u0027s empire extend